unisonic technologies co., ltd mje13005 npn silicon transistor www.unisonic.com.tw 1 of 10 copyright ? 2014 unisonic technologies co., ltd qw-r203-018. m npn silicon power transistors ? description these devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. they are particularly suited for 115 and 220 v switchmode. ? features * v ceo(sus) = 400 v * reverse bias soa with inductive loads @ t c = 100 * inductive switching matrix 2 to 4 amp, 25 and 100 t c @ 3a, 100 is 180 ns (typ) * 700v blocking capability * soa and switching applications information ? applications * switching regulator?s, inverters * motor controls * solenoid/relay drivers * deflection circuits ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 mje13005l-x-ta3-t mje13005g-x-ta3-t to-220 b c e tube mje13005l-x-tf3-t mje13005g-x-tf3-t to-220f b c e tube mje13005l-x-tm3-t mje13005g-x-tm3-t to-251 b c e tube mje13005l-x-tn3-r mje13005g-x-tn3-r to-252 b c e tape reel mje13005l-x-tnd-r mje13005g-x-tnd-r to-252d b c e tape reel mje13005l-x-t2q-t mje13005g-x-t2q-t to-262 b c e tube mje13005l-x-tq3-t mje13005g-x-tq3-t to-263 b c e tube mje13005l-x-tq3-r mje13005g-x-tq3-r to-263 b c e tape reel mje13005l-x-t60-k mje13005g-x -t60-k to-126 b c e bulk mje13005l-x-t6s-k mje13005g-x-t6s-k to-126s b c e bulk (1) t: tube, k: bulk, r: tape reel (2) ta3: to-220, tf3: to-220f,tm3: to-251, (2) tn3: to-252, tnd: to-252d, t2q: to-262, (2) tq3: to-263, t60: to -126, t6s: to-126s (3) x: refer to classification of h fe1 (4) l: lead free, g: halogen free mje13005l -x -ta3 -t (1)packing type (2)package type (4)lead free (3)rank
mje13005 npn silicon transistor unisonic technologies co., ltd 2 of 10 www.unisonic.com.tw qw-r203-018. m ? marking information package marking to-220 to-220f to-251 to-252 to-252d to-262 to-263 to-126 to-126s
mje13005 npn silicon transistor unisonic technologies co., ltd 3 of 10 www.unisonic.com.tw qw-r203-018. m ? absolute maximum ratings parameter symbol ratings unit collector-emitter voltage v ceo ( sus ) 400 v collector-emitter voltage (v be =0) v ces 700 v collector-base voltage v cbo 700 v emitter base voltage v ebo 9 v collector current continuous i c 4 a peak (1) i cm 8 a base current continuous i b 2 a peak (1) i bm 4 a emitter current continuous i e 6 a peak (1) i em 12 a power dissipation at t a =25 to-126/to-126s to-220f p d 40 w to-251/to-252 to-252d 50 to-220/to-263 to-262 75 derate above 25 to-126/to-126s to-220f 320 mw/ to-251/to-252 to-252d 400 to-220/to-263 to-262 600 operating and storage ju nction temperature t j , t stg -65 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient to-126/to-126s ja 89 /w to-251/to-252 to-252d 110 to-220/to-263 to-262/to-220f 62.5 junction to case to-126/to-126s to-220f jc 3.125 /w to-251/to-252 to-252d 2.5 to-220/to-263 to-262 1.67
mje13005 npn silicon transistor unisonic technologies co., ltd 4 of 10 www.unisonic.com.tw qw-r203-018. m ? electrical characteristics (t c =25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics (note 1) collector-emitter sustaining voltage v ceo ( sus ) i c =10ma , i b =0 400 v collector cutoff current i cbo v cbo =rated value, v be ( off ) =1.5v 1 ma v cbo =rated value, v be ( off ) =1.5v, t c =100 5 emitter cutoff current i ebo v eb =9v, i c =0 1 ma second breakdown second breakdown collector current with bass forward biased i s/b see fig. 11 clamped inductive soa with base reverse biased rbsoa see fig. 12 on characteristics (note 1) dc current gain h fe1 i c =0.5a, v ce =5v 15 50 h fe2 i c =1a, v ce =5v 10 60 h fe3 i c =2a, v ce =5v 8 40 collector-emitter satu ration voltage v ce(sat) i c =1a, i b =0.2a 0.5 v i c =2a, i b =0.5a 0.6 v i c =4a, i b =1a 1 v i c =2a, i b =0.5a, ta=100 1 v base-emitter satura tion voltage v be (sat) i c =1a, i b =0.2a 1.2 v i c =2a, i b =0.5a 1.6 v i c =2a, i b =0.5a, t c =100 1.5 v dynamic characteristics current-gain-bandwidth product f t i c =500ma, v ce =10v, f=1mhz 4 mhz output capacitance c ob v cb =10v, i e =0, f=0.1mhz 65 pf switching characteristics resistive load (table 1) delay time t d v cc =125v, i c =2a, i b1 =i b2 =0.4a, t p =25 s, duty cycle 1% 0.025 0.1 s rise time t r 0.3 0.7 s storage time t s 1.7 4 s fall time t f 0.4 0.9 s note: 1. pulse test: pulse width=5ms, duty cycle 10% note: 2. pulse test: p w =300 s, duty cycle 2% ? classification of h fe1 rank a b c d e range 15 ~ 20 20 ~ 25 25 ~ 30 30 ~ 40 40 ~ 50
mje13005 npn silicon transistor unisonic technologies co., ltd 5 of 10 www.unisonic.com.tw qw-r203-018. m ? application information table 1.test conditions for dynamic performance reverse bias safe operating area and inductive switching resistive switching test circuits p w 5v duty cycle Q 10% t r , t f Q 10ns 68 0.001 f 1k 1n4933 0.02 f 270 +5v 1k 1k 33 1n4933 1n4933 33 +5v r b mje210 i b 2n2222 2n2905 47 1/2w 100 mje200 -v be (off) t.u.t. v cc mr826* vclamp *selected for R 1kv 5.1k 51 v ce l i c note: p w and v cc adjusted for desired i c r b adjusted for desired i b1 +125v r b d1 -4.0v scope r c tut circuit values coil data : gap for 200 h/20 a v cc =20v ferroxcube core #6656 l coil =200 h v clamp =300v full bobbin ( ~ 16 turns) #16 v cc =125v r c =62 ? d1=1n5820 or equiv. rb=22 ? test waveforms output waveforms i c i c(pk) t f unclamped t 2 t t f t 1 v ce time t 2 t v ce or v clamp t f clamped t 1 adjusted to obtain ic test equipment scope-tektronics 475 or equivalent t 1 = l coil (i cpk ) v cc t 2 = l coil (i cpk ) v clamp
mje13005 npn silicon transistor unisonic technologies co., ltd 6 of 10 www.unisonic.com.tw qw-r203-018. m ? resistive switching performance t i m e , t ( ) t i m e , t ( ) t r a n s i e n t t h e r m a l r e s i s t a n c e , r ( t ) ( n o r m a l i z e d ) c o l l e c t o r c u r r e n t , i c ( a ) c o l l e c t o r c u r r e n t , i c ( p k ) ( a )
mje13005 npn silicon transistor unisonic technologies co., ltd 7 of 10 www.unisonic.com.tw qw-r203-018. m ? resistive switching performance(cont.) fig. 6 forward bias power derating case temperature, t c ( ) 1 0.8 0.6 0.4 0 20 40 60 80 100 120 140 160 second breakdown derating thermal derating 0.2
mje13005 npn silicon transistor unisonic technologies co., ltd 8 of 10 www.unisonic.com.tw qw-r203-018. m ? safe operating area information forward bias there are two limitations on the power handling ability of a transistor: aver age junction temperature and second breakdown. safe operating area curves indicate i c -v ce limits of the transistor that must be observed for reliable operation; e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of fig. 4 is based on t c = 25 ; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c 25 . second breakdown limitations do not derate the same as thermal limitations. allowable current at the voltages shown on fig. 4 may be found at any case temperature by using the appr opriate curve on fig. 6. t j(pk) may be calculated from the data in fig. 10. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. reverse bias for inductive loads, high voltage and high current must be sustained simultaneously during tu rn-off, in most cases, with the base to emitter junction reverse biased. under thes e conditions the collector voltage must be held to a safe level at or below a specific value of collector current. this can be accomplished by several means such as active clamping, rc snubbing, load line shaping, etc. the safe level for these devices is specified as reverse bias safe operating area and represents t he voltage-current cond itions during reverse biased turn-off. this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. figure 5 gives the complete rbsoa characteristics.
mje13005 npn silicon transistor unisonic technologies co., ltd 9 of 10 www.unisonic.com.tw qw-r203-018. m ? typical characteristics
mje13005 npn silicon transistor unisonic technologies co., ltd 10 of 10 www.unisonic.com.tw qw-r203-018. m utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
